Privacy Preserving Multi-Server k-means Computation over Horizontally Partitioned Data

The k-means clustering is one of the most popular clustering algorithms in data mining. Recently a lot of research has been concentrated on the algorithm when the dataset is divided into multiple parties or when the dataset is too large to be handled by the data owner. In the latter case, usually some servers are hired to perform the task of clustering. The dataset is divided by the data owner among the servers who together perform the k-means and return the cluster labels to the owner. The major challenge in this method is to prevent the servers from gaining substantial information about the actual data of the owner. Several algorithms have been designed in the past that provide cryptographic solutions to perform privacy preserving k-means. We provide a new method to perform k-means over a large set using multiple servers. Our technique avoids heavy cryptographic computations and instead we use a simple randomization technique to preserve the privacy of the data. The k-means computed has exactly the same efficiency and accuracy as the k-means computed over the original dataset without any randomization. We argue that our algorithm is secure against honest but curious and passive adversary.Comment: 19 pages, 4 tables. International Conference on Information Systems Security. Springer, Cham, 201

Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

The effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating voltage as low as $-$4 V. Results indicate that the PTFT with $hbox{NH}-{3}$-annealed $hbox{HfO}-{2}$ shows higher carrier mobility, larger on/off current ratio, smaller subthreshold swing, and lower threshold voltage than the PTFT with $hbox{O}-{2}$-annealed $hbox{HfO}-{2}$. Capacitancevoltage analysis for metal-polymer-oxide-silicon structures indicates that the better electrical performance of the PTFT with $hbox{NH}-{3}$ -annealed $hbox{HfO}-{2}$ is attributed to improved dielectric/polymer interface and reduced series resistance in the transistor. © 2006 IEEE.published_or_final_versio

Correlation functions, null polygonal Wilson loops, and local operators

We consider the ratio of the correlation function of n+1 local operators over the correlator of the first n of these operators in planar N=4 super-Yang-Mills theory, and consider the limit where the first n operators become pairwise null separated. By studying the problem in twistor space, we prove that this is equivalent to the correlator of a n-cusp null polygonal Wilson loop with the remaining operator in general position, normalized by the expectation value of the Wilson loop itself, as recently conjectured by Alday, Buchbinder and Tseytlin. Twistor methods also provide a BCFW-like recursion relation for such correlators. Finally, we study the natural extension where n operators become pairwise null separated with k operators in general position. As an example, we perform an analysis of the resulting correlator for k=2 and discuss some of the difficulties associated to fixing the correlator completely in the strong coupling regime.Comment: 34 pages, 6 figures. v2: typos corrected and references added; v3: published versio

Improved performance of pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridation

Pentacene organic thin-film transistors (OTFTs) with fluorinated high-κ HfLaO as gate insulator were fabricated. The dielectrics were prepared by sputtering method and then annealed in N 2 or NH 3 at 400 °C. Subsequently, the dielectrics were treated by fluorine plasma for different durations (100, 300, and 900 s). The N 2 and NH 3-annealed OTFTs with a 100-s plasma treatment achieve a carrier mobility of 0.62 and 0.66 cm 2V̇s, respectively, which are higher than those of the OTFTs without plasma treatment (0.22 and 0.41 cm 2V̇s). Moreover, the plasma-treated OTFTs realize better 1/f noise characteristics than those without plasma treatment. The improved performance is due to passivation of the dielectric surface by plasma-induced fluorine incorporation. However, for longer time (300 and 900 s) of plasma treatment, the performance of the OTFTs deteriorates in terms of carrier mobility and 1/f noise characteristics due to increased plasma-induced damage of the dielectric surface. The morphology of the pentacene film grown on the HfLaO gate insulator was characterized by SEM. It reveals that the pentacene film has larger grain size and smoother surface on the HfLaO dielectric (for both annealing gases) with 100-s plasma treatment than the others (0, 300, and 900 s). Finally, AFM characterization of the HfLaO film also confirms the damaging effect of excessive plasma treatment on the dielectric. © 2012 IEEE.published_or_final_versio

Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by I-V measurement and 1/f noise measurement. The OTFT with gate dielectric annealed in NH3 displays higher carrier mobility, smaller threshold voltage, smaller sub-threshold swing, and lower 1/f noise level than the OTFT annealed in N2. Moreover, the HfTiO dielectric film annealed in NH3 shows higher dielectric constant. In summary, HfTiO film annealed in NH 3 at low temperature is a promising candidate to act as the gate dielectric of high-quality low-voltage OTFTs. ©2009 IEEE.published_or_final_versionThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 201-20

Prediction of combustion noise for an aeroengine combustor

Combustion noise may become an important noise source for lean-burn gas turbine engines, and this noise is usually associated with highly unsteady flames. This work aims to compute the broadband combustion noise spectrum for a realistic aeroengine combustor, and to compare with available measured noise data on a demonstrator aeroengine. A low-order linear network model is applied to a demonstrator engine combustor to obtain the transfer function that relates to unsteadiness in the rate of heat release, acoustic, entropic and vortical fluctuations. A spectral model is used for the heat release rate fluctuation, which is the source of the noise. The mean flow of the aeroengine combustor required as input data to this spectral model is obtained from RANS simulations. The computed acoustic field for a low-medium power setting indicates that the models used in this study capture the main characteristics of the broadband spectral shape of combustion noise. Reasonable agreement with the measured spectral level is achieved.The current research has been conducted under UK Technology Strategy Board contract TP11/HVM/6/I/AB201K.This is the accepted manuscript. The final published version is available from ARC at http://arc.aiaa.org/doi/abs/10.2514/1.B34857. Copyright © 2013 by the authors. Published by the American Institute of Aeronautics and Astronautics, Inc., with permission

Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric

Pentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e., 200 °C and 400 °C, respectively. The I-V characteristics of the OTFTs and C-V characteristics of corresponding organic capacitors were measured. The OTFTs could operate at a low operating voltage of below 5 V, and the dielectric constant of the HfLaO film could be above ten. For all the annealing gases, the OTFTs annealed at 400 °C achieved higher carrier mobility than their counterparts annealed at 200 °C (with the one annealed in NH 3 at 400 °C showing the highest carrier mobility of 0.45 cm 2/ V·s), which could be supported by SEM images which indicate that pentacene tended to form larger grains on HfLaO annealed at 400 °C than on that annealed at 200 °C. The C-V measurement of the organic capacitors indicated that the localized charge density in the organic semiconductor/oxide was lower for the 400 °C annealing than for the 200 °C annealing. Furthermore, through the characterization of gate current leakage, HfLaO film annealed at 400 °C achieved much smaller leakage than that annealed at 200 °C. Since the maximum processing temperature of ITO glass substrates is around 400 °C , this study shows that 400 °C is suitable for the annealing of HfLaO film in high-performance OTFTs on glass substrate. © 2011 IEEE.published_or_final_versio

Correlation function of null polygonal Wilson loops with local operators

We consider the correlator of a light-like polygonal Wilson loop with n cusps with a local operator (like the dilaton or the chiral primary scalar) in planar N =4 super Yang-Mills theory. As a consequence of conformal symmetry, the main part of such correlator is a function F of 3n-11 conformal ratios. The first non-trivial case is n=4 when F depends on just one conformal ratio \zeta. This makes the corresponding correlator one of the simplest non-trivial observables that one would like to compute for generic values of the `t Hooft coupling \lambda. We compute F(\zeta,\lambda) at leading order in both the strong coupling regime (using semiclassical AdS5 x S5 string theory) and the weak coupling regime (using perturbative gauge theory). Some results are also obtained for polygonal Wilson loops with more than four edges. Furthermore, we also discuss a connection to the relation between a correlator of local operators at null-separated positions and cusped Wilson loop suggested in arXiv:1007.3243.Comment: 36 pages, 2 figure

Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric

Pentacene organic thin-film transistors (OTFTs) with HfLaO high-kappa gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N2,NH3,O2, or NO at 400°C. The carrier mobility of the NH3-annealed OTFT could reach 0.59 cm2/V̇s, which is higher than those of the other three devices. Moreover, the NH3-annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore,1/f noise measurement indicated that the NH3-annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH3 annealing on the dielectric surface. © 2010 IEEE.published_or_final_versio